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| SHANGHAI SUNRISE ELECTRONICS CO., LTD. SB85 SILICON SCHOTTKY DETECTING DIODE REVERSE VOLTAGE: 50V FORWARD CURRENT: 150mA FEATURES * Small glass structure ensures high reliability * Fast switching * Low leakage * High temperature soldering guaranteed: 250oC/10S/9.5mm lead length at 5 lbs tension TECHNICAL SPECIFICATION DO - 34 DO - 35 1.0 (25.4) MIN. .085 (2.2) .120 (3.0) 1.0 (25.4) MIN. 1.0 (25.4) MIN. .050 (1.27) .075 (1.91) DIA. .120 (3.0) .200 (5.1) 1.0 (25.4) MIN. .060 (1.5) .090 (2.3) DIA. MECHANICAL DATA * Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C * Case: Glass,hermetically sealed * Polarity: Color band denotes cathode * Mounting position: Any .018 (0.46) .022 (0.56) DIA. .018 (0.46) .022 (0.56) DIA. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND CHARACTERISTICS (Ratings at 25oC ambient temperature unless otherwise specified) RATINGS Reverse Voltage Forward Current (peak) Forward Current (D.C.) Forward Voltage (D.C.) Reverse Current (VR=30V) IF=10mA IF=100mA SYMBOL VR IFM IF VF1 VF2 IR VALUE Typ. Max. 50 150 30 0.4 0.8 3 UNITS V mA mA V V A pF o Capacitance (Note 1) Ct Detection Effectiveness (Note 2) Operating Junction and Storage TJ,TSTG Temperature Range Notes: 1. VR=10V, f=1MHz 2. Vm=3V(peak), f=30MHz, RL=3.9K, Ct=10pF. 6 60% -55 +125 C http://www.sse-diode.com |
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